| Part Number | 2SK2957L |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-567D (Z) 5th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High spee.
* Low on-resistance R DS(on) = 7mΩ typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain. |
2SK2957L Datasheet
The 2SK2957L is a Silicon N-Channel MOSFET.
| Part Number | 2SK2957L |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005
Features
• Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate .
* Low on-resistance RDS(on) = 7 mΩ typ. * 4 V gate drive devices. * High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 S Rev.4.00 Sep 07. |