| Part Number | 2SK3212 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device c.
* Low on-resistance R DS = 0.1 Ω typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline TO *220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3212 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak c. |
2SK3212 Datasheet and Specifications PDF
The 2SK3212 is a N-Channel MOSFET.
| Part Number | 2SK3212 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G10.
* Low on-resistance RDS =0.1 Ω typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.3.00 Se. |