| Part Number | 2SK3310 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High for. ient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 Ω , IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transist. |
2SK3310 Datasheet and Specifications PDF
The 2SK3310 is a N-Channel MOSFET.
Key Specifications
| Part Number | 2SK3310 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
450
V
VGS
Gate-Source Voltage-Continuo.
*Drain Current : ID= 10A@ TC=25℃ *Drain Source Voltage : VDSS= 450V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power s. |