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2SK3354 Datasheet

The 2SK3354 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2SK3354
ManufacturerNEC
Overview The 2SK3354 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS.
* Super low on-state resistance: 5 5 RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 42 A)
* Built-in gate protection diode 5
* Low Ciss: Ciss = 6300 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC).
Part Number2SK3354
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuou.
*Drain Current : ID= 83A@ TC=25℃
*Drain Source Voltage : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 8.0mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power sw.
Part Number2SK3354
DescriptionMOS Field Effect Transistor
ManufacturerKexin Semiconductor
Overview SMD Type MOSFET MOS Field Effect Transistor 2SK3354 Features Super low on-state resistance: RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss . Super low on-state resistance: RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss = 6300 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipa.