2SK3712 Datasheet

The 2SK3712 is a N-Channel MOSFET Transistor.

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Part Number2SK3712
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuo.
*Drain Current : ID= 9.0A@ TC=25℃
*Drain Source Voltage : VDSS= 250V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power .
Part Number2SK3712
DescriptionSWITCHING N-CHANNEL POWER MOSFET
ManufacturerNEC
Overview The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING I. a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3712 2SK3712-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES
* High voltage: VDSS = 250 V
* Gate voltage rating: ±30 V
* Low on.
Part Number2SK3712
DescriptionMOS Field Effect Transistor
ManufacturerKexin Semiconductor
Overview SMD Type MOSFICET MOS Field Effect Transistor 2SK3712 Features High voltage: VDSS = 250 V Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.58 MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ci. High voltage: VDSS = 250 V Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.58 MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm .