2SK3899 Datasheet and Specifications PDF

SMD Type MOSFET MOS Field Effect Transistor 2SK3899 Features Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss =.

Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.

The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3899-ZK PACKAGE TO-263 (MP-25ZK) FEATURES • Super low on-st.

* Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
* Low C iss: C iss = 5500 pF TYP.
* Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage .