2SK3919 Datasheet and Specifications PDF

The 2SK3919 is a MOS Field Effect Transistor.

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Part Number2SK3919 Datasheet
ManufacturerKexin Semiconductor
Overview SMD Type MOSFICET MOS Field Effect Transistor 2SK3919 Features Low on-state resistance RDS(on)1 = 5.6 m MAX. (VGS = 10 V, ID = 32 A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available +0.2 9.70 -0.. Low on-state resistance RDS(on)1 = 5.6 m MAX. (VGS = 10 V, ID = 32 A) Low Ciss: Ciss = 2050 pF TYP. 5 V drive available +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 .
Part Number2SK3919 Datasheet
DescriptionSWITCHING N-CHANNEL POWER MOSFET
ManufacturerNEC
Overview The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter . a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES
* Low on-state resistance.
Part Number2SK3919 Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 25 V VGS Gate-Source Voltage-Continuou.
*Drain Current : ID= 64A@ TC=25℃
*Drain Source Voltage : VDSS= 25V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power swit.