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2SK3919 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3919 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A) • Low Ciss: Ciss = 2050 pF TYP. • 5 V drive available (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 25 ±20 ±64 ±256 36 1.