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3DD13003B Datasheet

The 3DD13003B is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number3DD13003B
ManufacturerJIANGSU CHANGJIANG
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR( NPN ) FEATURES · power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise.
* power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Va.
Part Number3DD13003B
DescriptionNPN Plastic-Encapsulate Transistor
ManufacturerWeitron
Overview WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 3DD13003B FEATURES : • power switching applications 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise no. :
* power switching applications 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperatur.
Part Number3DD13003B
DescriptionNPN Plastic-Encapsulated Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview Elektronische Bauelemente 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Power switching applications Co.
* Power switching applications Collector 
* Base  Emitter TO-92 AD B REF. A Millimeter Min. Max. 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E CF E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 GH K 0.36 0.76 Emitter Collector
*Base J ABSOLUTE MAXIMUM RATINGS (TA=.

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