3DD5017 Datasheet and Specifications PDF

3DD5017 1. 3DD5017 NPN ，， 。： ● 、 ● ● ● ● ：TO-3P(H)IS 2. 15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ，Tamb= 25℃ - VCE0 650 V - VCB0 1100 V - VEB0 IC 7 15 V A .

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z 3DD5017 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, µÈÐ
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