| Part Number | 40N120 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
NGTB40N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching a.
a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on *state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is . |
40N120 Datasheet and Specifications PDF
The 40N120 is a IGBT.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Height | 24.75 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | 40N120 Datasheet |
|---|---|
| Description | IXEH40N120 |
| Manufacturer | IXYS |
| Overview |
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT.
* IGBT with NPT (non punch through) structure * reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery * positive temperature coefficient of saturation voltage * Epoxy of TO-247 package meets UL 94V-0 Applications c. |