Overview: IGBT with Reverse Blocking capability IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
VGE(th) I
CES
IGES QGon Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE V CE = V; CES V GE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V VCE = 120V; VGE = 15 V; IC = 35 A 2.3 2.7 V 2.8 V 4 8V 50 µA 3.
