40N120 Datasheet | onsemi

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on- state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co- packaged free wheeling diode with a low forward voltage. Features - Low Saturation Voltage using Trench with Field Stop Technology - Low Switching Loss Reduces System Power Dissipation - Optimized for Low Case Temperature in IH Cooker Application - Low Gate Charge - These are Pb- Free Devices Typical...