4N38 Datasheet and Specifications PDF

The 4N38 is a 6-PIN PHOTOTRANSISTOR OPTOCOUPLER.

Key Specifications

Pins6
Max Operating Temp100 °C
Min Operating Temp-55 °C
Part Number4N38 Datasheet
ManufacturerQT-BRIGHTEK
Overview 4N2X 4N3X H11AX series 6-PIN PHOTOTRANSISTOR OPTOCOUPLER Feature: Certification & Compliance:  4N2X: 4N25, 4N26, 4N27, 4N28  Pb free and RoHS Compliant  4N3X: 4N35, 4N36, 4N37, 4N38  UL re. Certification & Compliance:
* 4N2X: 4N25, 4N26, 4N27, 4N28
* Pb free and RoHS Compliant
* 4N3X: 4N35, 4N36, 4N37, 4N38
* UL recognized (File # E338132)
* H11AX: H11A1, H11A2, H11A3, H11A4, H11A5
* VDE recognized (File # 40030457)
* High Isolation voltage (Viso = 5000V rms)
* Operating Tempe.
Part Number4N38 Datasheet
Description6-Pin DIP Optoisolators
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N38/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrar. llector
*Emitter Voltage Emitter
*Collector Voltage Collector
*Base Voltage Collector Current
* Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Diss.
Part Number4N38 Datasheet
DescriptionPhototransistor Optocoupler
ManufacturerCT Micro
Overview The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series consist of a photo transistor optically coupled to an Infrared-emitting diode in a 6-lead DIP DMC-Isolator®.
* High isolation 5000 VRMS
* Patented coplanar structure DMC-Isolator®
* DC input with transistor output
* Operating Temperature range - 55 °C to 110 °C
* External Creepage ≥ 7.4mm
* Distance Through Isolation ≥ 0.4mm
* Clearance Distance ≥ 7.5mm (S/SL Type)
* Clearance Distance ≥ 8.0mm (M Type)
* R.
Part Number4N38 Datasheet
DescriptionHIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
ManufacturerFairchild Semiconductor
Overview The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NP.
* High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V
* High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute
* Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE APPLICATIONS
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* Power supply regulators Digital logic inputs Microp.

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