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4N38 - 6-Pin DIP Optoisolators

Key Features

  • s. “Typical” parameters can and do vary in different.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
4N30 6-Pin DIP Optoisolators
4N31 6-Pin DIP Optoisolators
4N32 6-Pin DIP Optoisolators
4N33 6-Pin DIP Optoisolators
4N35 6-Pin DIP Optoisolators

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N38/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.