Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N35/D
GlobalOptoisolator™
6-Pin DIP Optoisolators Transistor Output
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
- Current Transfer Ratio
- 100% Minimum @ Specified Conditions
- Guaranteed Switching Speeds
- Meets or Exceeds all JEDEC Registered Specifications
- To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications
- General Purpose Switching Circuits
- Interfacing and coupling systems of different...
