4N35 - 6-Pin DIP Optoisolators

Motorola Semiconductor (now NXP Semiconductors)

Key Features

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4N35 6-pin dip optoisolators by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	4N35
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	276.03 KB
Description	6-Pin DIP Optoisolators
Datasheet	4N35 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
4N30	6-Pin DIP Optoisolators
4N31	6-Pin DIP Optoisolators
4N32	6-Pin DIP Optoisolators
4N33	6-Pin DIP Optoisolators
4N36	6-Pin DIP Optoisolators

Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds all JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.