The 55GN01FA is a UHF Wide-band Low-noise Amplifier Applications.
| Package | SC |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 55GN01FA Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number : ENA1113
55GN01FA
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
55GN01FA
Features
• •
UHF Wide-band Low-noise Amplifier Applications.
* * UHF Wide-band Low-noise Amplifier Applications * * High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). Ultrasmall package permitting applied sets to be small and slim. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25. |
| Part Number | 55GN01FA Datasheet |
|---|---|
| Description | RF Transistor |
| Manufacturer | onsemi |
| Overview |
DATA SHEET
RF Transistor
10 V, 70 mA, fT = 5.5 GHz, NPN Single SSFP
55GN01FA
Features
• High Cut−off Frequency: fT = 5.5 GHz Typ • High Gain: ⎪S21e⎪2 = 11 dB Typ (f = 1 GHz)
⎪S21e⎪2 =.
* High Cut *off Frequency: fT = 5.5 GHz Typ * High Gain: ⎪S21e⎪2 = 11 dB Typ (f = 1 GHz) ⎪S21e⎪2 = 19 dB Typ (f = 400 MHz) * Ultrasmall Package Permitting Applied Sets to be Small and Slim * This Device is Pb *Free and Halide Free Specification ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| 55GN01M | SANYO | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications |
| 55GN01C | SANYO | UHF Wide-band Low-noise Amplifier Applications |
| 55GN01MA | SANYO | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications |
| 55GN01CA | onsemi | RF Transistor |
| 55GN01S | SANYO | UHF Wide-band Low-noise Amplifier Applications |
| 55GN01CA | SANYO | NPN Epitaxial Planar Silicon Transistor |
| 55GN01NA | SANYO | UHF Wide-band Low-noise Amplifier Applications |