| Part Number | 5N50 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. GS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 5N50 MIN TYPE MAX UNIT 500 V 2.0 4. |
5N50 Datasheet and Specifications PDF
The 5N50 is a TO-220F N-Channel MOSFET.
| Part Number | 5N50 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
5N50-VB
5N50-VB Datasheet
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4VQFS+VODUJPOPower MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
650 VGS = 10 V
0.95
Qg (Max.) (nC)
15
Qgs (nC)
3
Qgd (nC)
6
C.
* Low Gate Charge Qg Results in Simple Drive Requirement * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT * Fully Characterized Capacitance and Avalanche Voltage and Current * Compliant to RoHS directive 2002/95/EC TO-252 D GDS Top View G S N-Channel MOSFET . |
| Part Number | 5N50 Datasheet |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minim.
* RDS(ON) < 1.4Ω @VGS = 10 V, ID =2.5 A * 100% avalanche tested * High switching speed
* SYMBOL 1 TO-262 1 TO-220F 1 TO-220F1 1 TO-252 * ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 5N50L-TF3-T 5N50G-TF3-T 5N50L-TF1-T 5N50G-TF1-T 5N50L-TN3-R 5N50G-TN3-R 5N50L-T2Q. |