| Part Number | 60N05 Datasheet |
|---|---|
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC 60N05.
* RDS(ON)=12mΩ @ VGS=10V,ID=30A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 130nC)
* SYMBOL Power MOSFET * ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60N05L-TA3-T 60N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin . |
60N05 Datasheet and Specifications PDF
The 60N05 is a N-CHANNEL POWER MOSFET.
| Part Number | 60N05 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPL.
ered trademark
isc N-Channel MOSFET Transistor
*ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 50 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD . |