Datasheet Details
| Part number | 60N05 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 236.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 60N05-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05.
| Part number | 60N05 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 60N05-InchangeSemiconductor.pdf |
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·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 38．9 ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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60N05 | N-CHANNEL POWER MOSFET | UTC |
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60N05-16 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| 60N10 | N-Channel MOSFET Transistor |