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60N06 - N-CHANNEL POWER MOSFET

General Description

field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

Key Features

  • S.
  • RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A.
  • Ultra low gate charge ( typical 39nC).
  • Fast switching capability.
  • Low reverse transfer Capacitance (CRSS= typical 115pF).
  • Avalanche energy Specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-263 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( typical 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-263 1.Gate 3.