60N06 - N-CHANNEL POWER MOSFET

Product Overview

UTC

60N06 N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 60N06

Datasheet Details

Part number	60N06
Manufacturer	UTC
File Size	298.05 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	60N06 Datasheet
Additional preview pages of the 60N06 datasheet.

Product details

Description

The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.

Features

S.
RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A.
Ultra low gate charge ( typical 39nC).
Fast switching capability.
Low reverse transfer Capacitance (CRSS= typical 115pF).
Avalanche energy Specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-263 1.Gate 3.Source.

📁 Similar Datasheet

60N06 - TO-220F N-Channel MOSFET Transistor (INCHANGE)
60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
60N06-14 - N-Channel MOSFET (INCHANGE)
60N06-18 - N-Channel MOSFET (INCHANGE)
60N03 - Power MOSFET (Tuofeng Semiconductor)
60N03 - N-Channel MOSFET (Anachip)
60N03 - N-Channel MOSFET (Cmos)
60N035 - N-Channel Field Effect Transistor (ETC)

Other Datasheets by UTC

60N05 - N-CHANNEL POWER MOSFET
60N08 - N-CHANNEL POWER MOSFET
60NM50 - N-CHANNEL MOSFET
60NM65 - 650V N-CHANNEL SUPER-JUNCTION MOSFET

Published: May 31, 2014 |