| Part Number | 60N06 Datasheet |
|---|---|
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 60N06 is N-channel enhancement mode power
field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer app.
* RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( typical 39nC) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
* SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-263 1.Gat. |
60N06 Datasheet and Specifications PDF
The 60N06 is a N-CHANNEL POWER MOSFET.
| Part Number | 60N06 Datasheet |
|---|---|
| Description | TO-220F N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPL. L CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS Gate-Body Leakage Current VGS= ±20V;VD. |
| Part Number | 60N06 Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | GOFORD |
| Overview | The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at . l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 50A < 17mΩ < 21mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-252 Ordering Information Device 60N06 Package TO-252 Marking 60N06 Packaging 2500p. |