Datasheet Details
| Part number | 60N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.96 KB |
| Description | TO-220F N-Channel MOSFET Transistor |
| Datasheet | 60N06_INCHANGE.pdf |
|
|
Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06.
| Part number | 60N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 235.96 KB |
| Description | TO-220F N-Channel MOSFET Transistor |
| Datasheet | 60N06_INCHANGE.pdf |
|
|
|
·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 39 ID(puls) Pulse Drain Current 120 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
60N06 | N-CHANNEL POWER MOSFET | UTC |
| GOFORD | 60N06 | N-Channel Enhancement Mode Power MOSFET | GOFORD |
| Part Number | Description |
|---|---|
| 60N06-14 | N-Channel MOSFET |
| 60N06-18 | N-Channel MOSFET |
| 60N05-16 | N-Channel MOSFET |
| 60NF06 | N-Channel MOSFET Transistor |