Inchange Semiconductor 60N06
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 60N06 |
|---|---|
| Datasheet | 60N06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-220F N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 60A@ TC=25℃●Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●General purpose power amplifier High current,high speed switching Solenoid and relay driversABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 39 ID(puls) Pulse Drain Current 120 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range●THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
(TC=25℃) INCHANGE Semiconductor 60N06 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltag...