Datasheet4U Logo Datasheet4U.com

60N06 - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 50A < 17mΩ < 21mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number 60N06
Manufacturer GOFORD
File Size 653.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 60N06 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
60N06 TO-220F N-Channel MOSFET Transistor INCHANGE
60N06 N-CHANNEL POWER MOSFET UTC
60N06-14 N-Channel MOSFET INCHANGE
60N06-18 N-Channel MOSFET INCHANGE
60N03 Power MOSFET Tuofeng Semiconductor

Other Datasheets by GOFORD

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
60N06 N-Channel Enhancement Mode Power MOSFET Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.