60N06 Description
The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part number | 60N06 |
|---|---|
| Download | 60N06 Datasheet (PDF) |
| File Size | 653.54 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
60N06 | TO-220F N-Channel MOSFET Transistor |
Unisonic Technologies |
60N06 | N-CHANNEL POWER MOSFET |
Inchange Semiconductor |
60N06-14 | N-Channel MOSFET |
Inchange Semiconductor |
60N06-18 | N-Channel MOSFET |
The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.