6N80 Datasheet and Specifications PDF

The 6N80 is a N-Channel Power MOSFET.

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Part Number6N80 Datasheet
ManufacturerNell Power Semiconductor
Overview (6A, 800Volts) The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. th. RDS(ON) = 2.00Ω @ VGS = 10V Ultra low gate charge(88nC max.) Low reverse transfer capacitance (CRSS = 57pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (6N80A) GDS TO-220F (6N80AF) D (Drain) G (Gate) PRO.
Part Number6N80 Datasheet
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state re. * RDS(on) = 2.0Ω @VGS = 10 V * Improved dv/dt capability * Fast switching * 100% avalanche tested
* SYMBOL 2.Drain 1 Power MOSFET TO-220 TO-220F TO-220F1 TO-262 1.Gate 3.Source
* ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N80L-TA3-T 6N80G-TA3-T 6N80L-TF3-T 6N80G-.
Part Number6N80 Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N80 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Av.
*Drain Current ID= 6A@ TC=25℃
*Drain Source Voltage : VDSS= 800V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max)
*Avalanche Energy Specified
*Fast Switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION. Switch-mode and resonant-mode Pow.