6N80 - N-Channel MOSFET Transistor

Datasheet Summary

Features

Drain Current ID= 6A@ TC=25℃.
Drain Source Voltage : VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	6N80
Manufacturer	Inchange Semiconductor
File Size	234.67 KB
Description	N-Channel MOSFET Transistor
Datasheet	6N80 Datasheet
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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 6N80 ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 150 W Tj Max.

Published: Jul 13, 2016 |