6N80C - 800V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

5.5 A, 800 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V, ID = 2.75 A.
Low Gate Charge (Typ. 21 nC).
Low Crss (Typ. 8 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS G.

Fairchild Semiconductor

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Datasheet Details

Part number	6N80C
Manufacturer	Fairchild Semiconductor
File Size	1.03 MB
Description	800V N-Channel MOSFET
Datasheet	6N80C Datasheet
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FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ.

Published: Nov 29, 2018 |