6N80A - N-Channel MOSFET

Datasheet Summary

Features

Drain Current ID= 6A@ TC=25℃.
Drain Source Voltage: VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max).
Avalanche Energy Specified.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	6N80A
Manufacturer	INCHANGE
File Size	228.10 KB
Description	N-Channel MOSFET
Datasheet	6N80A Datasheet
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isc N-Channel MOSFET Transistor 6N80A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage: VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION. ·Switch-mode and resonant-mode ·Power supplies ·Motor controls ·Uninterruptible Power Supplies (UPS) ·DC choppers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 180 W Tj Max.

Published: Oct 18, 2020 |