74LVC245A Datasheet and Specifications PDF

The 74LVC245A is a Low-Voltage CMOS Octal Transceiver.

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Part Number74LVC245A Datasheet
Manufactureronsemi
Overview 74LVC245A Low-Voltage CMOS Octal Transceiver With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting) The 74LVC245A is a high performance, non−inverting octal transceiver operating from a 1.2 to.
* Designed for 1.2 to 3.6 V VCC Operation
* 5 V Tolerant
* Interface Capability with 5 V TTL Logic
* Supports Live Insertion and Withdrawal
* IOFF Specification Guarantees High Impedance When VCC = 0 V
* 24 mA Output Sink and Source Capability
* Near Zero Static Supply Current in All Three Logic Sta.
Part Number74LVC245A Datasheet
DescriptionOctal bus transceiver
ManufacturerNXP Semiconductors
Overview The 74LVC245A; 74LVCH245A are 8-bit transceivers featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The device features an output enable (OE) input for easy ca. an output enable (OE) input for easy cascading and a send/receive (DIR) input for direction control. OE controls the outputs so that the buses are effectively isolated. Inputs can be driven from either 3.3 V or 5 V devices. When disabled, up to 5.5 V can be applied to the outputs. These features all.
Part Number74LVC245A Datasheet
DescriptionOctal bus transceiver
ManufacturerNexperia
Overview The 74LVC245A; 74LVCH245A is an 8-bit transceiver with 3-state outputs. The device features an output enable (OE) and send/receive (DIR) for direction control. A HIGH on OE causes the outputs to assum. an output enable (OE) and send/receive (DIR) for direction control. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-tr.
Part Number74LVC245A Datasheet
DescriptionLOW VOLTAGE CMOS OCTAL BUS TRANSCEIVER
ManufacturerSTMicroelectronics
Overview The 74LVC245A is a low voltage CMOS OCTAL BUS TRANSCEIVER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 1.65 to 3.6 VCC operations a. .