| Part Number | A1271 Datasheet |
|---|---|
| Manufacturer | PACO |
| Overview | ST 2SA1271 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special reque. = 5 V -IEBO - - 0.1 µA Collector Emitter Breakdown Voltage at -IC = 10 mA -VCEO 30 - - V Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 20 mA -VCE(sat) - - 0.7 V Base Emitter Voltage at -IC = 10 mA, -VCE = 1 V -VBE 0.5 - 0.8 V Transition Frequency at -VCE = 5 V,. |
A1271 Datasheet and Specifications PDF
The A1271 is a PNP Silicon Epitaxial Planar Transistor.
| Part Number | A1271 Datasheet |
|---|---|
| Description | PNP Silicon Epitaxial Planar Transistor |
| Manufacturer | SEMTECH |
| Overview | ST 2SA1271 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special reque. ent at -VCB=35V Emitter Cutoff Current -ICBO - - at -VEB=5V Collector Emitter Saturation Voltage -IEBO - - at -IC=500mA, -IB=20mA Transition Frequency -VCE(sat) - - at -VCE=5V, -IC=10mA Base Emitter Voltage fT - 120 at -IC=10mA, -VCE=1V Collector Output Capacitance -VBE 0.5 - at. |
| Part Number | A1271 Datasheet |
|---|---|
| Description | PNP silicon transistor |
| Manufacturer | FGX |
| Overview |
■■APPLICATION：High Current Application.
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Juncti.
roduct
fT
120
MHz Ic= -10mA，VCE= -5V
Common Base Output Capacitance Cob
19
PF
VCB= -10V, IE=0, f = 1MHz
* *hFE Classification Classification hFE O 100~200 Y 160~320 . |
| Part Number | A1271 Datasheet |
|---|---|
| Description | 2SA1271 |
| Manufacturer | KEC |
| Overview | Free Datasheet . . |