| Part Number | AM2305 Datasheet |
|---|---|
| Manufacturer | AiT Semiconductor |
| Overview |
The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process.
* * * * -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON) * Exceptional on-resistance and Maximum DC current capability * Available in a SOT-23 package. These devices are particularl. |
AM2305 Datasheet and Specifications PDF
The AM2305 is a MOSFET -30V P-CHANNEL ENHANCEMENT MODE.
| Part Number | AM2305 Datasheet |
|---|---|
| Description | P-Channel Enhancement Mode MOSFET |
| Manufacturer | Axelite |
| Overview |
Top View
D
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G S
SOT-23
S
Applications
•
Power Management in Notebook Computer, Portabl.
* -20V/-4A, RDS(ON)=40mΩ (typ.) @ VGS=-4.5V RDS(ON)=55mΩ (typ.) @ VGS=-2.5V Pin Description Top View D * * * Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 S Applications * Power Management in Notebook Computer, Portable Equip. |