| Part Number | AO3401 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load sw. ax 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 6.1: February 2024 www.aosmd.com Page 1 of 5 AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V . |
AO3401 Datasheet PDF
The AO3401 is a 30V P-Channel MOSFET.
| Part Number | AO3401 Datasheet |
|---|---|
| Description | P-Channel Enhancement-Mode MOSFETs |
| Manufacturer | HAOHAI |
| Overview |
-3.8A,-30VP
P P-Channel Enhancement-Mode MOS FETs
Features ■-30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is a.
*-30V, -3.8A, RDS(ON)=50mΩ @ VGS=-10V *High dense cell design for extremely low RDS(ON) *Rugged and reliable *Lead free product is acquired *SOT-23 Package *Marking Code: B1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 HPM3401 P-Channel MOSFETs HPM3401 P-Chan. |
| Part Number | AO3401 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel Enhancement MOSFET AO3401 (KO3401)
MOSFET
■ Features
● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-.
* VDS (V) =-30V * ID =-4.2 A (VGS =-10V) * RDS(ON) ＜ 50mΩ (VGS =-10V) * RDS(ON) ＜ 65mΩ (VGS =-4.5V) * RDS(ON) ＜ 120mΩ (VGS =-2.5V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 G S 0-0.1 +0.1. |
| Part Number | AO3401 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
AO3401-VB
AO3401-VB Datasheet
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - 6 V
0.054 at VGS = - 4.5 V
ID (A)a - 5.6 -5 -4.5.
* TrenchFET® Power MOSFET * 100 % Rg Tested APPLICATIONS * For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source . |