| Part Number | AO4403 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | Product Summary The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load sw. s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 Page 1 of 5 AO4403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Para. |
AO4403 Datasheet and Specifications PDF
The AO4403 is a 30V P-Channel MOSFET.
| Part Number | AO4403 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET AO4403 (KO4403)
■ Features
● VDS (V) =-30V ● ID =-6 A (VGS =-10V) ● RDS(ON) ＜ 48mΩ (VGS =-10V) ● RDS(ON) ＜ 57mΩ (VGS =-4.5V) ● RDS(ON) ＜ 80mΩ (VGS =-2.5V)
+0.04 0.21 -0.02.
* VDS (V) =-30V * ID =-6 A (VGS =-10V) * RDS(ON) ＜ 48mΩ (VGS =-10V) * RDS(ON) ＜ 57mΩ (VGS =-4.5V) * RDS(ON) ＜ 80mΩ (VGS =-2.5V) +0.04 0.21 -0.02 SOP-8 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S * Absolute Maximum Ratings Ta = 25℃ Drain-Source V. |
| Part Number | AO4403 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Freescale Semiconductor |
| Overview | Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typ. ontinuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady-State Symbol RθJA Maximum 40 70 Units o o C/W . |