AO4408 Datasheet and Specifications PDF

The AO4408 is a N-Channel MOSFET.

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Part NumberAO4408 Datasheet
ManufacturerAlpha & Omega Semiconductors
Overview The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. A. VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous .
Part NumberAO4408 Datasheet
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET AO4408 (KO4408) ■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON) < 13mΩ (VGS = 10V) ● RDS(ON) < 16mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D G S MOSFET 1.50 .
* VDS (V) = 30V
* ID = 12 A (VGS = 10V)
* RDS(ON) < 13mΩ (VGS = 10V)
* RDS(ON) < 16mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D G S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Pa.
Part NumberAO4408 Datasheet
DescriptionP-Channel MOSFET
ManufacturerFreescale Semiconductor
Overview Freescale AO4408/MC4408 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat . (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec t <= 5 sec RθJC RθJA Maximum 25 50 Units o o C/W C/W No.