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AO4408L - N-Channel MOSFET

Datasheet Summary

Description

The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast switching.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

AO4408L(Green Product) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Avalanche Current B,E B,E Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV L=0.1mH EAV PD TJ, TSTG TA=25°C Repetitive Avalanche Energy Power Dissipation TA=70°C Ju.

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Datasheet preview – AO4408L

Datasheet Details

Part number AO4408L
Manufacturer Freescale
File Size 280.05 KB
Description N-Channel MOSFET
Datasheet download datasheet AO4408L Datasheet
Additional preview pages of the AO4408L datasheet.

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Full PDF Text Transcription

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AO4408, AO4408L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Avalanche Current B,E B,E Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV L=0.
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