The AO4415 is a P-Channel MOSFET.
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | AO4415 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET AO4415 (KO4415)
■ Features
● VDS (V) =-30V ● ID =-8 A (VGS =-20V) ● RDS(ON) ＜ 26mΩ (VGS =-20V) ● RDS(ON) ＜ 35mΩ (VGS =-10V)
SOP-8
+0.04 0.21 -0.02
D
MOSFET
1.50 0.15
.
* VDS (V) =-30V * ID =-8 A (VGS =-20V) * RDS(ON) ＜ 26mΩ (VGS =-20V) * RDS(ON) ＜ 35mΩ (VGS =-10V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S * Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Par. |
| Part Number | AO4415 Datasheet |
|---|---|
| Description | P-Channel FET |
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | provide Features VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low l. VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View S S S G D D D D D G S Absolut. |
| Part Number | AO4415 Datasheet |
|---|---|
| Description | P-Channel 30V MOSFET |
| Manufacturer | VBsemi |
| Overview |
AO4415-VB
AO4415-VB Datasheet
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.024 at VGS = - 4.5 V
ID (A)d - 9.0 - 7.8
Qg (Typ.) 1.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg Tested APPLICATIONS * Load Switch * Battery Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = . |
| Part Number | AO4415 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Freescale Semiconductor |
| Overview | Freescale P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for. C TA=70oC ID IDM -30 V ±25 9.5 8.3 A ±50 Continuous Source Current (Diode Conduction)a IS -2.1 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 3.1 2.6 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Casea t <= . |
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