AO4449 Datasheet and Specifications PDF

The AO4449 is a 30V P-Channel MOSFET.

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Part NumberAO4449 Datasheet
ManufacturerAlpha & Omega Semiconductors
Overview Product Summary The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS . ximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 3.1: August 2023 Page 1 of 6 AO4449 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS .
Part NumberAO4449 Datasheet
DescriptionP-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type P-Channel MOSFET AO4449 (KO4449) ■ Features ● VDS (V) =-30V ● ID =-7 A (VGS =-10V) ● RDS(ON) ＜ 34mΩ (VGS =-10V) ● RDS(ON) ＜ 54mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 .
* VDS (V) =-30V
* ID =-7 A (VGS =-10V)
* RDS(ON) ＜ 34mΩ (VGS =-10V)
* RDS(ON) ＜ 54mΩ (VGS =-4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Pa.
Part NumberAO4449 Datasheet
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview AO4449-VB AO4449-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.033 at VGS = - 10 V - 30 0.043 at VGS = - 6 V 0.056 at VGS = - 4.5 V ID (A) - 5.
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Compliant to RoHS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-.