Click to expand full text
AO4449-VB
AO4449-VB Datasheet
P-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.033 at VGS = - 10 V
- 30
0.043 at VGS = - 6 V
0.056 at VGS = - 4.5 V
ID (A) - 5.8 - 5.0 - 4.4
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 5.8 - 4.6
- 4.1 - 3.2
A
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 2.3
- 1.
AO4449 Datasheet
