• Part: AO4449
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 202.65 KB
Download AO4449 Datasheet PDF
VBsemi
AO4449
AO4449 is P-Channel MOSFET manufactured by VBsemi.
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - pliant to Ro HS Directive 2002/95/EC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage - 30 ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C - 5.8 - 4.6 - 4.1 - 3.2 - 30 Continuous Source Current (Diode Conduction)a - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 70 °C 2.5...