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AO4441 - P-Channel 60V MOSFET

Datasheet Summary

Features

  • Trench power MOSFET.
  • 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET www. VBsemi. com.

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Datasheet Details

Part number AO4441
Manufacturer VBsemi
File Size 250.04 KB
Description P-Channel 60V MOSFET
Datasheet download datasheet AO4441 Datasheet
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AO4441-VB AO4441-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063 -8 FEATURES • Trench power MOSFET • 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.
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