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AO4447 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-15 A (VGS =-10V).
  • RDS(ON) ＜ 7.5mΩ (VGS =-10V).
  • RDS(ON) ＜ 12mΩ (VGS =-4.5V).
  • ESD Rating: 4KV HBM D +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation Thermal Resistance. Junction- to-A.

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SMD Type P-Channel MOSFET AO4447 (KO4447) MOSFET ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON) ＜ 7.5mΩ (VGS =-10V) ● RDS(ON) ＜ 12mΩ (VGS =-4.5V) ● ESD Rating: 4KV HBM D +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Ta = 25℃ Ta = 70℃ Ta = 25℃ Ta = 70℃ t ≤10s Steady-State Steady-State Symbol VDS VGS ID IDM IAR EAR PD RthJA RthJC TJ Tstg Rating -30 ±20 -15 -13.6 -60 40 240 3.