AO4447 Datasheet | Kexin Semiconductor

Features - VDS (V) =-30V - ID =-15 A (VGS =-10V) - RDS(ON) ＜ 7.5mΩ (VGS =-10V) - RDS(ON) ＜ 12mΩ (VGS =-4.5V) - ESD Rating: 4KV HBM +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3m H Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Ta = 25℃ Ta = 70℃ Ta = 25℃ Ta = 70℃ t ≤10s Steady-State Steady-State Symbol VDS VGS IDM IAR EAR Rth JA Rth JC TJ Tstg Rating -30 ±20 -15 -13.6 -60 40 240 3.1 2 40 75 24 150 -55 to 150 Unit V A A m J W ℃/W ℃ .kexin..cn 1 SMD Type MOSFET P-Channel MOSFET AO4447 (KO4447) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown...