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AO4447A - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-17 A (VGS =-10V).
  • RDS(ON) ＜ 7mΩ (VGS =-10V).
  • RDS(ON) ＜ 8mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 9mΩ (VGS =-4V).
  • ESD Rating: 2000V HBM D +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain Rg G S.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Re.

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SMD Type P-Channel MOSFET AO4447A (KO4447A) MOSFET ■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON) ＜ 7mΩ (VGS =-10V) ● RDS(ON) ＜ 8mΩ (VGS =-4.5V) ● RDS(ON) ＜ 9mΩ (VGS =-4V) ● ESD Rating: 2000V HBM D +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain Rg G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -17 -13 -160 3.1 2 40 75 24 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.