AO4447 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Green Product ordering option. AO4447 and AO4447L are electrically identical. SOIC-8 Top View S S S G D D D D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum -30 ±20 -15 -13.6 -60 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 μA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250 μA VGS=-10V, VDS=-5V VGS=-10V, I D=-15A Static Drain-Source On-Resistance VGS=-4V, ID=-13A g FS VSD IS Forward Transconductance VDS=-5V, ID=-15A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C -1 -60 6.7 9.4 9.2 60 -0.69 -1 5.5 5500 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 745 473 3.1 88.8 VGS=-10V, VDS=-15V, 15A I D=45.2 10.1 19.4 12 VGS=-10V, VDS=-15V, RL=1.7Ω, RGEN=3Ω IF=-15A, d I/dt=100A/ μs IF=-15A, d I/dt=100A/ μs 11.5 100 40 46.6 67.7 60 4 120 60 6600 8 12 12 -1.3 Min -30 -1 -10 ±10 -1.6 Typ Max Units V μA μA V A mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage...