AO4480 Datasheet and Specifications PDF

The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applicat.

bient A t ≤ 10s Steady-State RqJA 30 59 40 75 Maximum Junction-to-Lead C Steady-State RqJL 16 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Rev 2.1: March 2024 Page 1 of 4 AO4480 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions .

SMD Type N-Channel MOSFET AO4480 (KO4480) ■ Features ● VDS (V) = 40V ● ID = 14 A (VGS = 10V) ● RDS(ON) ＜ 11.5mΩ (VGS = 10V) ● RDS(ON) ＜ 15.5mΩ (VGS = 4.5V) ● ESD Rating: 4KV HBM SOP-8 +0.04 0.21 -.

* VDS (V) = 40V
* ID = 14 A (VGS = 10V)
* RDS(ON) ＜ 11.5mΩ (VGS = 10V)
* RDS(ON) ＜ 15.5mΩ (VGS = 4.5V)
* ESD Rating: 4KV HBM SOP-8 +0.04 0.21 -0.02 D G S MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
* Absolute Maximum Ratings Ta = 25℃ Drain-Sou.

The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applicat.

VDS (V)=40V ID=14A RDS(ON)<12mΩ(VGS=10V) RDS(ON)<16mΩ(VGS=4.5V) 3.Pinning information Pin 4 1,2,3 5,6,7,8 Symbol G S D Description GATE SOURCE DRAIN SOP-8 8765 D D D D S S S G 1234 D G S 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Contin.

The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge.It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applicati.

VDSS 40 V ID 14 A RDS(ON)(atVGS =10V) <11.5 mΩ RDS(ON)(atVGS =4.5V) <15.5 mΩ D D D D D SS SG G S Package Marking and Ordering Information Product ID Pack Marking AO4480 SOP-8 4480 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-S.