AO4818 Datasheet and Specifications PDF

SMD Type Dual N-Channel MOSFET AO4818 (KO4818) MOSFET ■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON) ＜ 19mΩ (VGS = 10V) ● RDS(ON) ＜ 23mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM D1 D2 SOP-.

* VDS (V) = 30V
* ID = 8A (VGS = 10V)
* RDS(ON) ＜ 19mΩ (VGS = 10V)
* RDS(ON) ＜ 23mΩ (VGS = 4.5V)
* ESD Rating: 2KV HBM D1 D2 SOP-8 Unit:mm +0.04 0.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2
* Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source.

The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10.

D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7.1: March 2024 Page 1 of 6 AO4818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ .

AO4818 AO4818 Datasheet Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.016 at VGS = 10 V 30 0.020 at VGS = 4.5 V ID (A)a 8.5 7.6 Qg (Typ.) 7.1 FEATURES.

* TrenchFETPower MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Notebook System Power
* Low Current DC/DC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATING.