AO4932 Datasheet and Specifications PDF

Product Summary The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination.

°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR 11 9 60 15 11 8 6.5 40 19 18 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-t.

SMD Type Dual N-Channel MOSFET AO4932 (KO4932) MOSFET ■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 11 A (VGS = 10V) ● RDS(ON) ＜ 12.5mΩ (VGS = 10V) ● RDS(ON) ＜ 15mΩ (VGS = 4.5V) ● SRFETTM Soft Reco.

N-Channel 1
* VDS (V) = 30V
* ID = 11 A (VGS = 10V)
* RDS(ON) ＜ 12.5mΩ (VGS = 10V)
* RDS(ON) ＜ 15mΩ (VGS = 4.5V)
* SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode N-Channel 2
* VDS (V) = 30V
* ID = 8 A (VGS = 10V)
* RDS(ON) ＜ 19mΩ (VGS = 10V)
* RDS(ON) ＜ 23mΩ (VGS = 4.5V) D1 D2 +0.04 0.21 .

AO4932-VB AO4932-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 at VGS = 10 V 30 0.012 at VGS = 4.5 V ID (A) 8 6.8 Qg (Typ.) 15 nC FEAT.

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC SO-8 D2 1 D2 2 G1 3 S 1 /A 4 Top View 8 G2 7 D1/S2 /C 6 D1/S2 /C 5 D1/S2 /C APPLICATIONS
* Set Top Box
* Low Current DC/DC ᎋ፸ ᎒ .