AO6601 Datasheet and Specifications PDF

The AO6601 is a N- and P-Channel 20V MOSFET.

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Part NumberAO6601 Datasheet
ManufacturerVBsemi
Overview AO6601-VB AO6601-VB Datasheet N- and P-Channel 20V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel VDS (V) 20 - 20 RDS(on) (Ω) 0.022 at VGS = 10 V 0.030at VGS = 4.5 V 0.055 at VG.
* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G2 3 4 D2 2.85 mm D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °.
Part NumberAO6601 Datasheet
DescriptionMOSFET
ManufacturerAlpha & Omega Semiconductors
Overview The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of. n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-ch.