AO6601 Datasheet | Alpha & Omega Semiconductors

Description The AO6601 uses advanced trench technology to .. provide excellent RDS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Max p-channel -30 ±12 -2.3 -1.8 -30 1.15 0.73 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±12 3.4 2.7 30 1.15 0.73 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6601 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=10V, I D=3A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, I D=3A VGS=2.5V, I D=2A g FS VSD IS Forward Transconductance VDS=5V, ID=3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.6 10 50 75 60 88 7.8 0.8 1 1.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 4.34 VGS=4.5V, V DS=15V, I D=3A 1.38 0.6 4 VGS=10V, VDS=15V, RL=5Ω, RGEN=6Ω IF=3A, d...