AO6603
AO6603 is MOSFET manufactured by Alpha & Omega Semiconductors.
Description
The AO6603 uses advanced trench technology to provide excellent R .. DS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V)
< 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V)
D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2
D2
S2 n-channel p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current Power Dissipation
Max p-channel -30 ±12 -2.3 -1.8 -30 1.15 0.73 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
1.7 1.4 15 1.15 0.73 -55 to 150
W °C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead
Symbol RθJA RθJL
Typ 78 106 64
Max 110 150 80
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250 µA VGS=4.5V, V DS=5V VGS=4.5V, I D=1.7A Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, I D=1A VGS=1.8V, I D=0.7A g FS VSD IS Forward Transconductance VDS=5V, ID=1.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 5 186 262 241 326 2.8 0.69 1 0.4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.57 VGS=4.5V, V DS=10V, I D=1.7A 0.13 0.36 3.2 VGS=5V, VDS=10V, RL=3Ω, RGEN=3Ω IF=1A, d...
