AO6602
AO6602 is 30V Complementary MOSFET manufactured by Alpha & Omega Semiconductors.
Description
Product Summary
The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
N-Channel VDS= 30V ID= 3.5A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 70mΩ (VGS=4.5V)
P-Channel -30V -2.7A (VGS=-10V) RDS(ON) < 100mΩ (VGS=-10V) < 170mΩ (VGS=-4.5V)
Top View
TSOP6 Bottom View
Top View
D1 D2
G1 1
6 D1
S2 2 5 S1
G2 3 4 D2
G1
G2
S1 S2
Pin1 n-channel p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
3.5 -2.7 ID 3 -2.1
IDM 20
-15
TA=25°C Power Dissipation B TA=70°C
1.15 1.15 PD 0.73 0.73
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units V...
