AO6604L Datasheet | Alpha & Omega Semiconductors

Description The AO6604 uses advanced trench technology to .. provide excellent RDS(ON) and low gate charge. The plementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package. Features n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60m Ω < 110mΩ (VGS = 4.5V) < 75m Ω < 140mΩ (VGS = 2.5V) < 100m Ω < 200mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation Max p-channel -20 ±8 -2.5 -2.0 -15 1.15 0.73 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±8 3.4 2.7 15 1.15 0.73 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6604, AO6604L N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=3.4A Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=3A VGS=1.8V, ID=2A g FS VSD IS Forward Transconductance VDS=5V, ID=3.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 15 46 63 57 72 10 0.76 1 2 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 6.2 VGS=4.5V, VDS=10V, ID=3.4A 1.6 0.5 5.5 VGS=5V, VDS=10V, RL=3Ω, RGEN=3Ω IF=3.4A, d I/dt=100A/µs 6.3 40 12.7 12.3 3.5 16 4 8.1 570 60 80 75 100 0.6 Min 20 1 5 100 1 Typ Max Units V µA n A V A mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C STATIC...